Datasheet Summary
Silicon N Channel MOS FET High Speed Switching
ADE-208-806 (Z) 1st.Edition. June 1999 Features
- Low on-resistance R DS =1.26 Ω typ. (V GS = 10 V , ID = 150 mA) R DS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA)
- 4 V gate drive device.
Outline
SPAK
12 3
1. Source 2. Drain 3....