2SK3349 Overview
2SK3349 Silicon N Channel MOS FET High Speed Switching ADE-208-804 (Z) 1st.Edition.
2SK3349 Key Features
- Low on-resistance R DS = 2.8 Ω typ. (at VGS = 4 V , ID = 25 mA) R DS = 4.8 Ω typ. (at VGS = 2.5 V , I D = 10 mA)
- 2.5 V gate drive device
- Small package (SMPAK)