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2SK3349 Datasheet N-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK3349 Silicon N Channel MOS FET High Speed Switching ADE-208-804 (Z) 1st.Edition.

Key Features

  • Low on-resistance R DS = 2.8 Ω typ. (at VGS = 4 V , ID = 25 mA) R DS = 4.8 Ω typ. (at VGS = 2.5 V , I D = 10 mA).
  • 2.5 V gate drive device.
  • Small package (SMPAK) Outline SMPAK 3 1 2 D G 1. Source 2. Gate 3. Drain S 2SK3349 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS I.

2SK3349 Distributor

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