Datasheet Summary
Silicon N Channel MOS FET High Speed Switching
ADE-208-804 (Z) 1st.Edition. June 1999 Features
- Low on-resistance R DS = 2.8 Ω typ. (at VGS = 4 V , ID = 25 mA) R DS = 4.8 Ω typ. (at VGS = 2.5 V , I D = 10 mA)
- 2.5 V gate drive device
- Small package (SMPAK)
Outline
SMPAK
3 1 2 D
1. Source 2. Gate 3....