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2SK3349 - N-Channel MOSFET

Key Features

  • Low on-resistance R DS = 2.8 Ω typ. (at VGS = 4 V , ID = 25 mA) R DS = 4.8 Ω typ. (at VGS = 2.5 V , I D = 10 mA).
  • 2.5 V gate drive device.
  • Small package (SMPAK) Outline SMPAK 3 1 2 D G 1. Source 2. Gate 3. Drain S 2SK3349 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS I.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK3348 N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK3349 Silicon N Channel MOS FET High Speed Switching ADE-208-804 (Z) 1st.Edition. June 1999 Features • Low on-resistance R DS = 2.8 Ω typ. (at VGS = 4 V , ID = 25 mA) R DS = 4.8 Ω typ. (at VGS = 2.5 V , I D = 10 mA) • 2.5 V gate drive device • Small package (SMPAK) Outline SMPAK 3 1 2 D G 1. Source 2. Gate 3. Drain S 2SK3349 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note 2 Note1 Ratings 20 ±10 50 200 50 100 150 –55 to +150 Unit V V mA mA mA mW °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value on the alumina ceramic board (12.5x20x0.