4AK27 Overview
4AK27 Silicon N Channel MOS FET High Speed Power Switching ADE-208-728 (Z) 1st.
4AK27 Key Features
- Low on-resistance R DS(on) ≤ 0.15Ω, VGS = 10V, ID = 3.0A
- 4V gate drive devices
- High density mounting
| Part number | 4AK27 |
|---|---|
| Datasheet | 4AK27_HitachiSemiconductor.pdf |
| File Size | 53.04 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | Silicon N Channel MOS FET High Speed Power Switching |
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4AK27 Silicon N Channel MOS FET High Speed Power Switching ADE-208-728 (Z) 1st.
See all Hitachi Semiconductor (now Renesas) datasheets
| Part Number | Description |
|---|---|
| 4AK20 | Silicon N-Channel Power MOS FET Array |
| 4AK21 | Silicon N-Channel Power MOS FET Array |
| 4AK22 | Silicon N-Channel Power MOS FET Array |
| 4AK23 | Silicon N-Channel Power MOS FET Array |
| 4AK25 | Silicon N-Channel Power MOS FET Array |
| 4AK26 | Silicon N-Channel Power MOS FET Array |
| 4AK15 | Silicon N-Channel Power MOS FET Array |
| 4AK16 | Silicon N-Channel Power MOS FET Array |
| 4AK17 | Silicon N-Channel Power MOS FET Array |
| 4AK18 | Silicon N-Channel Power MOS FET Array |