4AK27 Description
4AK27 Silicon N Channel MOS FET High Speed Power Switching ADE-208-728 (Z) 1st.
4AK27 Key Features
- Low on-resistance R DS(on) ≤ 0.15Ω, VGS = 10V, ID = 3.0A
- 4V gate drive devices
- High density mounting
- Part: 4AK27
- Manufacturer: Hitachi Semiconductor
- Size: 53.04 KB
Related Hitachi Semiconductor Datasheets
| Part Number | Description |
|---|---|
| 4AK20 | Silicon N-Channel Power MOS FET Array |
| 4AK21 | Silicon N-Channel Power MOS FET Array |
| 4AK22 | Silicon N-Channel Power MOS FET Array |
| 4AK23 | Silicon N-Channel Power MOS FET Array |
| 4AK25 | Silicon N-Channel Power MOS FET Array |