2SK3349 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS = 2.8 Ω typ. (at VGS = 4 V , ID = 25 m A) R DS = 4.8 Ω typ. (at VGS = 2.5 V , I D = 10 m A) - 2.5 V gate drive device - Small package (SMPAK) Outline SMPAK 3 1 2 D 1. Source 2. Gate 3. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note 2 Note1 Ratings 20 ±10 50 200 50 100 150 - 55 to +150 Unit V V m A m A m A m W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value on the alumina ceramic board (12.5x20x0.7 mm) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 20 ±10 - - 0.8 - - 56 - - - - - - - Typ - - - - - 2.8 4.8 85 6 7 1.2 120 450 480 500 Max - - ±5 1 1.8 3.6 7.2 - - - - - - - - Unit V V µA µA V Ω Ω m S p F p F p F ns ns ns ns Test Conditions I D = 100 µA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±8 V, VDS = 0 VDS = 20 V, VGS = 0 I D = 10 µA, VDS = 5 V ID = 25 m A,VGS = 4 V Note 3 ID = 10 m A,VGS = 2.5 V Note 3 ID = 25 m A, VDS = 10 V Note 3 Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss VDS = 10 V VGS = 0 f = 1 MHz I D = 25 m A, VGS = 4 V RL = 400 Ω Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Note: 3. Pulse test 4. Marking is DN t d(on) tr t d(off) tf Main Characteristics Power vs. Temperature Derating 200 - Pch (m W) 5 2 1.0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002...