2SK3380 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS =1.26 Ω typ. (V GS = 10 V , ID = 150 m A) R DS = 2.8 Ω typ. (VGS = 4 V , ID = 50 m A) - 4 V gate drive device. Outline SPAK 12 3 1. Source 2. Drain 3. Gate Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note1 Ratings 30 ±20 300 1.2 300 300 150 - 55 to +150 Unit V V m A A m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 30 ±20 - - 1.3 - - 145 - - - - - - - Typ - - - - - 1.26 2.8 220 6 18 2 200 600 1100 1100 Max - - ±5 1 2.3 1.44 3.44 - - - - - - - - Unit V V µA µA V Ω Ω m S p F p F p F ns ns ns ns Test Conditions I D = 100 µA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 30 V, VGS = 0 I D = 10µA, VDS = 5 V ID = 150 m A,VGS = 10 V Note 2 ID = 50 m A,VGS = 4 V Note 2 ID = 150 m A, VDS =10 V Note 2 Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss VDS = 10 V VGS = 0 f = 1 MHz I D = 150 m A, VGS = 10 V RL = 66.6 Ω Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Note: t d(on) tr t d(off) tf 2. Pulse test See characteristics curves of 2SK3288 Main Characteristics Maximum Safe Operation Area 5 2 1.0 0.5 0.2 0.1 0.05 0.02 Operation in this area 0.01 is limited by RDS(on) 0.005 0.002 0.001 Ta=25 °C 0.0005 0.05 0.1 0.2 0.5 1.0 Power vs. Temperature Derating...