3SK228 Datasheet | Hitachi Semiconductor

.. Ga As Dual Gate MES FET ADE-208-280 1st. Edition Application UHF TV tuner RF Amplifier Outline .. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 - 6 - 6 50 150 125 - 55 to +125 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source cutoff current Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Gate 1 cutoff current Gate 2 cutoff current Drain current Symbol I DSX V(BR)G1SS V(BR)G2SS I G1SS I G2SS I DSS Min - - 6 - 6 - - 10 - - 20 - - - 17 - Typ - - - - - 17 - 1.1 - 1.1 34 0.58 0.36 0.028 19.6 1.3 Max 50 - - - 5 - 5 32 - 1.5 - 1.5 - 1.0 0.6 0.05 - 2.0 Unit µA V V µA µA m A V V m S p F p F p F d B d B VDS = 5 V, VG2S = 1 V, I D = 10 m A, f = 900 MHz Test conditions VDS = 12 V, VG1S = - 3 V, VG2S = 0 I G1 = - 10 µA, VG2S = VDS = 0 I G2 = - 10 µA, VG1S = VDS = 0 VG1S = - 5 V, VG2S = VDS = 0 VG2S = - 5 V, VG1S = VDS = 0 VDS = 5 V, VG1S = VG2S = 0 VDS = 5 V, VG2S = 0, I D = 100 µA VDS = 5 V, VG1S = 0, I D = 100 µA VDS = 5 V, VG2S = 1 V, I D = 10 m A, f = 1 k Hz VDS = 5 V, VG1S = VG2S = - 3 V, f = 1 MHz Gate 1 to source cutoff voltage VG1S(off) Gate 2 to source cutoff voltage VG2S(off) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Note: Marking is “XR- ”. |yfs| Ciss Coss Crss PG...