3SK300 Datasheet | Hitachi Semiconductor

Features - Low noise figure NF = 1.0 d B typ. at f = 200 MHz - High gain PG = 27.6 d B typ. at f = 200 MHz Outline MPAK-4 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 14 ±8 ±8 25 150 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Gate 1 cutoff current Gate 2 cutoff current Drain current Symbol V(BR)DSX V(BR)G1SS V(BR)G2SS I G1SS I G2SS I DS(op) Min 14 ±8 ±8 - - 4 0 0 20 2.4 0.8 - 24 - 12 - - Typ - - - - - 8 +0.2 +0.3 25 3.1 1.1 0.021 27.6 1.0 15.6 3.0 2.7 Max - - - ±100 ±100 14 +1.0 +1.0 - 3.5 1.4 0.04 - 1.5 - 4.0 3.5 Unit V V V n A n A m A V V ms p F p F p F d B d B d B d B d B Test conditions I D = 200 µA, VG1S = - 3 V, VG2S = - 3 V I G1 = ±10 µA, VDS = VG2S = 0 I G2 = ±10 µA, VDS = VG1S = 0 VG1S = ±6 V, VDS = VG2S = 0 VG2S = ±6 V, VDS = VG1S = 0 VDS = 6 V, VG1S = 0.75 V, VG2S = 3 V VDS = 10 V, VG2S = 3 V, I D = 100 µA VDS = 10 V, VG1S = 3 V, I D = 100 µA VDS = 6 V, VG2S = 3 V, I D = 10 m A, f = 1 k Hz VDS = 6 V, VG2S = 3 V, ID = 10 m A f = 1 MHz VDS = 6 V, VG2S = 3 V, I D = 10 m A, f = 200 MHz VDS = 6 V, VG2S = 3 V, I D = 10 m A, f = 900 MHz VDS = 6 V, VG2S = 3 V, I D = 10 m A, f = 60 MHz Gate 1 to source cutoff voltage VG1S(off) Gate 2 to source cutoff voltage VG2S(off) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Power gain Noise figure Noise figure Note: Marking is “ZR- ” |yfs| Ciss Coss Crss PG NF PG NF NF Main Characteristics Maximum Channel Power Dissipation Curve Channel power dissipation Pch (m W) 200 Typical Output Characteristics 1.2 V VG2S = 3 V Pulse test 1.0 V 16 150 Drain current ID (m...