3SK309 Datasheet | Hitachi Semiconductor

Features - Capable of low voltage operation (VDS = 1.5 to 3 V) - Excellent low noise characteristics (NF = 1.25 d B typ. at f = 900 MHz) - High power gain (PG = 21.0 d B typ. at f = 900 MHz) Outline CMPAK- 4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 - 4 - 4 18 100 125 - 55 to +125 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Gate 1 to cutoff current Gate 2 to cutoff current Symbol I G1SS I G2SS Min - - - 0.2 - 0.2 25 30 18 - - - Typ - - - - 40 40 21 1.25 20 1.3 Max - 20 - 20 - 1.5 - 1.5 60 - - 1.5 - - Unit µA µA V V m A m S d B d B d B d B Test conditions VG1S = - 4 V VG2S = VDS = 0 VG2S = - 4 V VG1S = VDS = 0 VDS = 3 V, VG2S = 0 I D = 100 µA VDS = 3 V, VG1S = 0 I D = 100 µA VDS = 3 V, VG1S = 0 VG2S = 0 VDS = 3 V, VG2S = 0 I D = 5 m A, f = 1 k Hz VDS = 3 V, VG2S = 0 I D = 5 m A, f = 900 MHz VDS = 1.5 V, VG2S = 0 I D = 3 m A, f = 900 MHz Gate 1 to source cutoff voltage VG1S(off) Gate 2 to source cutoff voltage VG2S(off) Zero gate voltege drain current I DSS Forward transfer admittance Power gain Noise figure Power gain Noise figure Note: Marking is “XV- ” |yfs| PG NF PG NF Main Characteristics Maximum Channel Power Dissipation Curve 200 Channel Power Dissipation Pch (m W) Typical Output Characteristics - 0.4 V - 0.5 V - 0.6 V Pulse Test - 0.7 V Drain Current ID (m...