3SK317 Datasheet | Hitachi Semiconductor

Features - Low noise characteristics; (NF = 1.0 d B typ. at f = 200 MHz) - High power gain characteristics ; (PG = 27.6 d B typ. at f = 200 MHz) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: Marking is “ZR-”. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 14 ±8 ±8 25 100 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 14 ±8 ±8 - - 0 0 4 20 2.4 0.8 - 24 - 12 - - Typ - - - - - 0.2 0.3 8 25 3.1 1.1 0.021 27.6 1.0 15.6 3 2.7 Max - - - ±100 ±100 1 1 14 - 3.5 1.4 0.04 - 1.5 - 4 3.5 Unit V V V n A n A V V m A m S p F p F p F d B d B d B d B d B VDS = 6 V, VG2S = 3 V I D = 10 m A , f = 200 MHz VDS = 6 V, VG2S = 3 V I D = 10 m A , f = 900 MHz VDS = 6 V, VG2S = 3 V I D = 10 m A , f = 60 MHz Test Conditions I D = 200 µA VG1S = VG2S = -3 V I G1 = ±10 µA VG2S = VDS = 0 I G2 = ±10 µA VG1S = VDS = 0 VG1S = ±6 V VG2S = VDS = 0 VG2S = ±6 V VG1S = VDS = 0 VDS = 10 V, VG2S = 3 V I D = 100 µA VDS = 10 V, VG1S = 3 V I D = 100 µA VDS = 6 V, VG1S = 0.75 V VG2S = 3 V VDS = 6 V, VG2S = 3 V I D = 10 m A , f = 1 k Hz VDS = 6 V, VG2S = 3 V I D = 10 m A , f = 1 MHz Drain to source breakdown voltage V(BR)DSS Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Power gain Noise figure Noise figure V(BR)G1SS V(BR)G2SS I G1SS I G2SS VG1S(off) VG2S(off) I DS(op) |yfs| Ciss Coss Crss PG NF PG NF NF Maximum Channel Power Dissipation Curve Channel power dissipation Pch (m W) 200 I D (m A) Typical Output Characteristics 1.2 V VG2S= 3 V Pulse test 1.0 V 12 100 Drain...