3SK318 Datasheet | Hitachi Semiconductor

Features - Low noise characteristics; (NF= 1.4 d B typ. at f= 900 MHz) - Excellent cross modulation characteristics - Capable low voltage operation; +B= 5V Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: Marking is “YB- ”. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 ±6 ±6 20 100 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current I G1SS Gate2 to source cutoff current I G2SS Gate1 to source cutoff voltage VG1S(off) Gate2 to source cutoff voltage VG2S(off) Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure I DS(op) |yfs| Ciss Coss Crss PG NF - - 0.5 0.5 0.5 18 1.3 0.9 - 18 - - - 0.7 0.7 4 24 1.6 1.2 0.019 21 1.4 ±100 ±100 1.0 1.0 10 32 1.9 1.5 0.03 - 2.2 n A n A V V m A m S p F p F p F d B d B VDS = 3.5V, VG2S = 3V I D = 10m A , f = 900MHz VG1S = ±5V, VG2S = VDS = 0 VG2S = ±5V, VG1S = VDS = 0 VDS = 5V, VG2S = 3V I D = 100µA VDS = 5V, VG1S = 3V I D = 100µA VDS = 3.5V, VG1S = 1.1V VG2S = 3V VDS = 3.5V, VG2S = 3V I D = 10m A , f = 1k Hz VDS = 3.5V, VG2S = 3V I D = 10m A , f= 1MHz V(BR)G2SS ±6 - - V I G2 = ±10µA, VG1S = VDS = 0 V(BR)G1SS ±6 - - V I G1 = ±10µA, VG2S = VDS = 0 Symbol Min V(BR)DSS 6 Typ - Max - Unit V Test Conditions I D = 200µA, VG1S = VG2S = 0 Maximum Channel Power Dissipation Curve Pch (m W) 200 I D (m A) Typical Output Characteristics VG1S = 1.7 V V G2S = 3 V 1.6 V 1.5 V Channel Power Dissipation 1.4 V 1.3 V 1.2 V Drain Current 1.1 V 1.0 V 0.9 V 0.8...