3SK322 Datasheet | Hitachi Semiconductor

Features - Low noise figure. NF = 1.0 d B typ. at f = 200 MHz - Capable of low voltage operation - Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 150 150 - 55 to +150 Unit V V V m A m W °C °C Attention: This device is very sensitive to electro static discharge. It is remended to adopt appropriate cautions when handling this transistor. Electrical Characteristics (Ta = 25°C) Item Symbol Min 12 ±8 ±8 - - 0.5 0 0 16 2.4 0.8 - 22 - 12 - - Typ - - - - - - - - 20 2.9 1.0 0.023 25 1.0 15 3.2 2.8 Max - - - ±100 ±100 10 +1.0 +1.0 - 3.4 1.4 0.04 - 1.8 - 4.5 3.5 Unit V V V n A n A m A V V m S p F p F p F d B d B d B d B d B VDS = 6 V, VG2S = 3V, I D = 10 m A, f = 60 MHz VDS = 6 V, VG2S = 3V, I D = 10 m A, f = 900 MHz VDS = 6 V, VG2S = 3V, I D = 10 m A, f = 200 MHz Test conditions I D = 200 µA , VG1S = - 3 V, VG2S = - 3 V I G1 = ±10 µA, VG2S = VDS = 0 I G2 = ±10 µA, VG1S = VDS = 0 VG1S = ±6 V, VG2S = VDS = 0 VG2S = ±6 V, VG1S = VDS = 0 VDS = 6 V, VG1S = 0.75V, VG2S = 3 V VDS = 10 V, VG2S = 3V, I D = 100 µA VDS = 10 V, VG1S = 3V, I D = 100 µA VDS = 6 V, VG2S = 3V, I D = 10 m A, f = 1 k Hz VDS = 6 V, VG2S = 3V, I D = 10 m A, f = 1 MHz Drain to source breakdown voltage V(BR)DSX Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Gate 1 cutoff current Gate 2 cutoff current Drain current Gate 1 to source cutoff voltage Gate 2 to source cutoff voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Power gain Noise figure Noise figure Note: Marking is “ZW- ” V(BR)G1SS V(BR) G2SS I G1SS I G2SS I DS(on) VG1S(off) VG2S(off) |yfs| Ciss Coss Crss PG NF PG NF NF Main Characteristics...