4AK21 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS(on) 0.09 , VGS = 10 V, I D = 4 A R DS(on) 0.12 , VGS = 4 V, I D = 4 A - Capable of 4 V gate drive - Low drive current - High speed switching - High density mounting - Suitable for motor driver, solenoid driver and lamp driver - Discrete packaged devices of same die: 2SK1302, 2SK1307 Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain Absolute Maximum Ratings (Ta = 25°C) (1 Unit) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 devices operation Symbol VDSS VGSS ID I D(pulse)- I DR Pch (Tc = 25°C)- Pch- Tch Tstg 2 2 1 Rating 100 ±20 8 32 8 28 4 150 - 55 to +150 Unit V V A A A W W °C °C Electrical Characteristics (Ta = 25°C) (1 Unit) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 100 ±20 - - 1.0 - - |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 6.0 - - - - - - - - - Typ - - - - - 0.07 0.09 10.0 1300 540 160 12 60 320 120 1.0 200 Max - - ±10 250 2.0 0.09 0.125 - - - - - -...