4AK23
4AK23 is Silicon N-Channel Power MOS FET Array manufactured by Hitachi Semiconductor.
Features
- Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A
- Low drive current
- High speed switching
- High density mounting
- Suitable for H-bridged motor driver
Outline
SP-12TA
1 G
2 D
5 G
4 D
8 G
9 D
12 G
11 D
10 1112
S 3
S 6
S 7
S 10
1, 5, 8, 12. Gate 2, 4, 9, 11. Drain 3, 6, 7, 10. Source
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 Devices operation Symbol VDSS VGSS ID I D(pulse)- I DR Pch (Tc = 25°C)- Pch- Tch Tstg
2 2 1
Ratings 100 ±20 5 20 5 32 4 150
- 55 to +150
Unit V V A A A W W °C °C
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 100 ±20
- - 1.0
- - Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr...
