4AK25 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS(on) 0.45 , VGS = 10 V, I D = 1 A - Low drive current - High speed switching - High density mounting Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 Devices operation Symbol VDSS VGSS ID I D(pulse)- I DR Pch (Tc = 25°C)- Pch- Tch Tstg 2 2 1 Ratings 60 ±20 1.5 4.5 1.5 24 3.6 150 - 55 to +150 Unit V V A A A W W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 ±20 - - 1.0 - - Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 0.9 - - - - - - - - - Typ - - - - - 0.35 0.47 1.5 140 70 20 3 12 50 30 1.1 70 Max - - ±10 250 2.0 0.45 0.65 - - - - - - - - - - Unit V V µA µA V Ω Ω S p F p F p F ns ns ns ns V µs I F = 1.5 A, VGS = 0 I F = 1.5 A, VGS = 0, d IF/dt = 50 A/µs Test conditions I D = 10 m A, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1 m A, VDS = 10 V ID = 1 A VGS = 10 V- 1 ID = 1 A VGS = 4 V- 1 ID = 1 A VDS = 10 V- 1 VDS = 10 V VGS = 0 f = 1 MHz ID = 1 A VGS = 10 V RL = 30 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off)...