Datasheet Details
| Part number | 2SA614 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.41 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA614-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA614.
| Part number | 2SA614 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.41 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA614-INCHANGE.pdf |
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|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -55V (Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.5V (Max.)@ IC= -1A ·Collector Power Dissipation- : PC= 25W@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -55 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A PC Collector Power Dissipation 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -500μA;
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