Inchange Semiconductor 2SD1044
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD1044 |
|---|---|
| Datasheet | 2SD1044 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Darlington Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC Current Gain : hFE= 700(Min.)@ IC= 1A, VCE= 4V●High Collector-Emitter Breakdown Voltage- : V(BR) CEO= 80V(Min)
●Wide Area of Safe Operation
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1044 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCER Collector-Emitter Breakdown Voltage IC= 50mA, RBE= 1kΩ V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB...