Datasheet Details
| Part number | 2SD111 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.95 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD111-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD111 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.95 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD111-INCHANGE.pdf |
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·High Power Dissipation- : PC= 100W@TC= 25℃ ·High Current Capability- : IC = 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier , power switching ,DC-DC converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 10 A IE Emitter Current-Continuous 10 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SD111 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;
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