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2SD1139 - NPN Transistor

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Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier TV vertical deflecti

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Datasheet Details

Part number 2SD1139
Manufacturer INCHANGE
File Size 188.86 KB
Description NPN Transistor
Datasheet download datasheet 2SD1139 Datasheet
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1139 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 1.
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