2SD1139
Description
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: 2SD1139
- Description: NPN Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 188.86 KB