Datasheet Details
| Part number | 2SD1139 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.86 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1139-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1139.
| Part number | 2SD1139 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.86 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1139-INCHANGE.pdf |
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 1.8 W 30 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1139 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
RBE= ∞ 200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
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