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2SD235 - NPN Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 3.0A Complement to Type 2SB435 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio po

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Datasheet Details

Part number 2SD235
Manufacturer INCHANGE
File Size 209.23 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 3.0A ·Complement to Type 2SB435 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.0 A 1.5 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD235 isc website：www.iscsemi.
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