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Inchange Semiconductor
2SD235
DESCRIPTION - Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) - Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 3.0A - plement to Type 2SB435 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ Junction Temperature 1.5 W ℃ Tstg Storage Temperature Range -55~150 ℃...