3DD103E Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min.) ·DC Current Gain- : hFE= 10(Min.)@IC= 1.5A ·Collector-Emitter Saturation Voltage-.
Datasheet Details
| Part number | 3DD103E |
|---|---|
| Datasheet | 3DD103E-INCHANGE.pdf |
| File Size | 198.34 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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