3DD103E Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min.) ·DC Current Gain- : hFE= 10(Min.)@IC= 1.5A ·Collector-Emitter Saturation Voltage-.
- Part: 3DD103E
- Manufacturer: Inchange Semiconductor
- Size: 198.34 KB
Related Inchange Semiconductor Datasheets
| Part Number | Description |
|---|---|
| 3DD100A | NPN Transistor |
| 3DD100B | NPN Transistor |
| 3DD100C | NPN Transistor |
| 3DD100D | NPN Transistor |
| 3DD100E | NPN Transistor |