Datasheet Details
| Part number | 3DD103E |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.34 KB |
| Description | NPN Transistor |
| Datasheet |
 3DD103E Datasheet
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General Description
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min.)
DC Current Gain-
: hFE= 10(Min.)@IC= 1.5A
Collector-Emitter Saturation Voltage-
: VCE(sat)= 4V(Max)@ IC= 3A
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed f