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3DD103E - NPN Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min.) DC Current Gain- : hFE= 10(Min.)@IC= 1.5A Collector-Emitter Saturation Voltage- : VCE(sat)= 4V(Max)@ IC= 3A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed f

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Datasheet Details

Part number 3DD103E
Manufacturer INCHANGE
File Size 198.34 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min.) ·DC Current Gain- : hFE= 10(Min.)@IC= 1.
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