BD536 - PNP Transistor

Inchange Semiconductor

General Description

DC Current Gain - : hFE = 40@ IC= -0.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) Complement to Type BD535 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power linear and switchin

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Datasheet Details

Part number	BD536
Manufacturer	Inchange Semiconductor
File Size	189.71 KB
Description	PNP Transistor
Datasheet	BD536 Datasheet

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isc Silicon PNP Power Transistor BD536 DESCRIPTION ·DC Current Gain - : hFE = 40@ IC= -0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·Complement to Type BD535 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in medium power linear and switching applications.