Inchange Semiconductor BD536
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BD536 |
|---|---|
| Datasheet | BD536 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●DC Current Gain - : hFE = 40@ IC= -0.5A●Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min)
●Complement to Type BD535
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in medium power linear and switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -60 VCES Collector-Emitter Voltage -60 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 IB Base Current -1 PC Collector Power Dissipation @ TC=25℃ 50 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBO L PARAME...