Datasheet4U Logo Datasheet4U.com

BD896 - PNP Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) High DC Current Gain : hFE= 750(Min) @IC= -3A Collector Power Dissipation- : PC= 70W@ TC= 25℃ 8 A Continuous Collector Current Complement to Type BD895 Minimum Lot-to-Lot variations for robust device performance

📥 Download Datasheet

Datasheet preview – BD896

Datasheet Details

Part number BD896
Manufacturer INCHANGE
File Size 208.79 KB
Description PNP Transistor
Datasheet download datasheet BD896 Datasheet
Additional preview pages of the BD896 datasheet.

📁 Similar Datasheet

  • BD896 - PNP Transistor (Bourns Electronic Solutions)
  • BD896 - Silicon PNP Power Transistors (Comset Semiconductors)
  • BD8960NV - Low Noise High Efficiency Step-down Switching Regulator (Rohm)
  • BD8961NV - 2.0A 1ch Synchronous Buck Converter (Rohm)
  • BD8962MUV - 3A 1ch Synchronous Buck Converter (Rohm)
  • BD89630EFJ - 2A 1ch Synchronous Buck Converter integrated FET (Rohm)
  • BD8963EFJ - 3A 1ch Synchronous Buck Converter (Rohm)
  • BD8964FVM - 1.2A 1ch Synchronous Buck Converter (Rohm)
  • BD8966FVM - 0.8A 1ch Synchronous Buck Converter (Rohm)
  • BD8967FVM - 0.8A 1ch Synchronous Buck Converter (Rohm)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Darlington Power Transistor BD896 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Collector Power Dissipation- : PC= 70W@ TC= 25℃ ·8 A Continuous Collector Current ·Complement to Type BD895 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -45 VCEO Collector-Emitter Voltage -45 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 IB Base Current-Continuous -0.
Published: |