BD896 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Collector Power Dissipation-.
| Part number | BD896 |
|---|---|
| Datasheet | BD896-INCHANGE.pdf |
| File Size | 208.79 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Collector Power Dissipation-.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
![]() |
BD896 | PNP Transistor | Bourns Electronic Solutions |
| BD896 | Silicon PNP Power Transistors | Comset Semiconductors | |
![]() |
BD8960NV | Low Noise High Efficiency Step-down Switching Regulator | Rohm |