BD896 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Collector Power Dissipation-.
BD896 is PNP Transistor manufactured by Inchange Semiconductor .
| Manufacturer | Part Number | Description |
|---|---|---|
Bourns |
BD896 | PNP Transistor |
| BD896 | Silicon PNP Power Transistors | |
ROHM |
BD8960NV | Low Noise High Efficiency Step-down Switching Regulator |
ROHM |
BD8961NV | 2.0A 1ch Synchronous Buck Converter |
ROHM |
BD8962MUV | 3A 1ch Synchronous Buck Converter |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Collector Power Dissipation-.