BD896A Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -4A ·Collector Power Dissipation-.
BD896A is PNP Transistor manufactured by Inchange Semiconductor .
| Manufacturer | Part Number | Description |
|---|---|---|
Power Innovations Limited |
BD896A | PNP Transistor |
SavantIC |
BD896A | SILICON POWER TRANSISTOR |
Bourns |
BD896 | PNP Transistor |
| BD896 | Silicon PNP Power Transistors | |
ROHM |
BD8960NV | Low Noise High Efficiency Step-down Switching Regulator |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -4A ·Collector Power Dissipation-.