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MMBT2907A - PNP Transistor

Description

Low Voltage Use Ultra Super Mini Mold Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise and small signal amplifiers from VHF band to UHF band ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER

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isc Silicon PNP Transistor MMBT2907A DESCRIPTION ·Low Voltage Use ·Ultra Super Mini Mold Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise and small signal amplifiers from VHF band to UHF band ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range VALUE -60 -60 -5 -0.6 0.
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