Datasheet4U Logo Datasheet4U.com

MMBT2907A Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Transistor MMBT2907A.

General Description

·Low Voltage Use ·Ultra Super Mini Mold Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise and small signal amplifiers from VHF band to UHF band ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range VALUE -60 -60 -5 -0.6 0.3 -55~150 -55~150 UNIT V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage ICBO Collector Cutoff Current ICEX Collector Cutoff Current hFE DC Current Gain VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(sat)-1 Base-Emitter Saturation Voltage VBE(sat)-2 Base-Emitter Saturation Voltage isc website:www.iscsemi.cn CONDITIONS MIN TYP.

MAX UNIT IC= -10mA ;

IB= 0 -60 V VCE= -50V;

MMBT2907A Distributor & Price

Compare MMBT2907A distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.