Inchange Semiconductor MMBT2907A
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | MMBT2907A |
|---|---|
| Datasheet | MMBT2907A Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Voltage Use●Ultra Super Mini Mold Package
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in low noise and small signal amplifiers from VHF band to UHF bandABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range VALUE -60 -60 -5 -0.6 0.3 -55~150 -55~150 UNIT V V V A W ℃ ℃ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage ICBO Collector Cutoff Current ICEX Collector Cutoff Current hFE DC Current Gain VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(sat)-1 Base-Emitter Saturation Voltage VBE(sat)-2 Base-Emitter Saturation Voltage isc website： CONDITIONS MIN TYP. MAX UNIT IC= -10mA...