Datasheet4U Logo Datasheet4U.com

TIP147 - PNP Transistor

General Description

High DC Current Gain- : hFE = 1000(Min)@ IC= -5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) Complement to Type TIP142 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier a

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TIP147 Darlington Complementary Silicon Power Transistors ON Semiconductor
TIP147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Central Semiconductor
TIP147 PNP TRANSISTORS CDIL
TIP147 PNP Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
TIP147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics

Other Datasheets by Inchange Semiconductor

Part Number Description
TIP147F PNP Transistor
TIP140 NPN Transistor
TIP141 NPN Transistor
TIP141T NPN Transistor
TIP142T NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Complement to Type TIP142 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -0.