• Part: FTD03N03N
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: IPS
  • Size: 238.13 KB
Download FTD03N03N Datasheet PDF
IPS
FTD03N03N
FTD03N03N is N-Channel MOSFET manufactured by IPS.
Features : - Ro HS pliant - Low ON Resistance - Low Gate Charge - Peak Current vs Pulse Width Curve Ordering Information PART NUMBER FTD03N03N PACKAGE TO-252 MARKING FTD03N03N Pb Lead Free Package and Finish VDSS 30V RDS(ON) (Typ.) 2.8m : ID 150A TO-252 Not to Scale Absolute Maximum Ratings TC=25 o C unless otherwise specified Symbol Parameter VDSS ID ID@ 100o C IDM Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current, VGS@ 10V Power Dissipation Derating Factor above 25 o C (NOTE - 1) (NOTE - 2) VGS Gate-to-Source Voltage Single Pulse Avalanche Engergy L=1.0 m H IAS dv/dt Pulsed Avalanche Rating Peak Diode Recovery dv/dt (NOTE - 3) TL TPKG TJ and TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds Package Body for 10...