FTD03N03N
FTD03N03N is N-Channel MOSFET manufactured by IPS.
Features
:
- Ro HS pliant
- Low ON Resistance
- Low Gate Charge
- Peak Current vs Pulse Width Curve
Ordering Information
PART NUMBER FTD03N03N
PACKAGE TO-252
MARKING FTD03N03N
Pb Lead Free Package and Finish
VDSS 30V
RDS(ON) (Typ.) 2.8m :
ID 150A
TO-252 Not to Scale
Absolute Maximum Ratings TC=25 o C unless otherwise specified
Symbol
Parameter
VDSS ID ID@ 100o C IDM
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current, VGS@ 10V Power Dissipation Derating Factor above 25 o C
(NOTE
- 1) (NOTE
- 2)
VGS Gate-to-Source Voltage
Single Pulse Avalanche Engergy L=1.0 m H
IAS dv/dt
Pulsed Avalanche Rating Peak Diode Recovery dv/dt
(NOTE
- 3)
TL TPKG
TJ and TSTG
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds Package Body for 10...