FTD09N20R
FTD09N20R is N-Channel MOSFET manufactured by IPS.
Features
:
- Ro HS pliant
- Low ON Resistance
- Low Gate Charge
- Peak Current vs Pulse Width Curve
- Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
TO-252
BRAND
VDSS 200V
Lead Free Package and Finish
RDS(ON)(Typ.) 0.24Ω
ID 9A
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-to-Source Voltage
ID Continuous Drain Current Continuous Drain Current TC =100℃
IDM Pulsed Drain Current (NOTE
- 1)
9 5.4 36
Power Dissipation PD Derating Factor above 25℃ VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy(NOTE
- 2)
75 0.6 ±30 200 dv/dt
Peak Diode Recovery dv/dt(NOTE
- 3)
TL Maximum Temperature for Soldering
Operating Junction and Storage TJ and TSTG Temperature Range
150,-55 to150
Units V A A A W
W/℃ V m...