• Part: FTD09N20R
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: IPS
  • Size: 144.25 KB
Download FTD09N20R Datasheet PDF
IPS
FTD09N20R
FTD09N20R is N-Channel MOSFET manufactured by IPS.
Features : - Ro HS pliant - Low ON Resistance - Low Gate Charge - Peak Current vs Pulse Width Curve - Inductive Switching Curves Ordering Information PART NUMBER PACKAGE TO-252 BRAND VDSS 200V Lead Free Package and Finish RDS(ON)(Typ.) 0.24Ω ID 9A Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter VDSS Drain-to-Source Voltage ID Continuous Drain Current Continuous Drain Current TC =100℃ IDM Pulsed Drain Current (NOTE - 1) 9 5.4 36 Power Dissipation PD Derating Factor above 25℃ VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy(NOTE - 2) 75 0.6 ±30 200 dv/dt Peak Diode Recovery dv/dt(NOTE - 3) TL Maximum Temperature for Soldering Operating Junction and Storage TJ and TSTG Temperature Range 150,-55 to150 Units V A A A W W/℃ V m...