FTD150N10N
FTD150N10N is N-Channel MOSFET manufactured by IPS.
Features
:
- Ro HS pliant
- Low ON Resistance
- Low Gate Charge
- Peak Current vs Pulse Width Curve
- Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE FTD150N10N TO-252
BRAND
VDSS 100V
Lead Free Package and Finish
RDS(ON)(Typ.) 113mΩ
ID 14A
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-to-Source Voltage
ID Continuous Drain Current Continuous Drain Current TC =100℃
14 8.2
IDM Pulsed Drain Current (NOTE
- 1)
Power Dissipation PD Derating Factor above 25℃ VGS Gate-to-Source Voltage
43.1 0.34 ±20
EAS Single Pulse Avalanche Energy(NOTE
- 2)
IAS Avalanche Current
TL Maximum Temperature for Soldering
Operating Junction and Storage TJ and TSTG Temperature Range
150，-55 to150
Units V A A A W
W/℃ V m J A
℃
Thermal...
