FTD18N20R
FTD18N20R is N-Channel MOSFET manufactured by IPS.
Features
:
- Ro HS pliant
- Low ON Resistance
- Low Gate Charge
- Peak Current vs Pulse Width Curve
- Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
TO-252
BRAND
VDSS 200V
Lead Free Package and Finish
RDS(ON)(Typ.) 0.12Ω
ID 18A
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-to-Source Voltage
ID Continuous Drain Current Continuous Drain Current TC =100℃
IDM Pulsed Drain Current (NOTE
- 1)
18 11.3 72
Power Dissipation PD Derating Factor above 25℃
100 0.8
VGS Gate-to-Source Voltage
±30
EAS Single Pulse Avalanche Energy(NOTE
- 2)
500 dv/dt
Peak Diode Recovery dv/dt(NOTE
- 3)
TL Maximum Temperature for Soldering
Operating Junction and Storage TJ and TSTG Temperature Range
150,-55...