• Part: FTD06N03NA
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: IPS
  • Size: 234.15 KB
Download FTD06N03NA Datasheet PDF
IPS
FTD06N03NA
FTD06N03NA is N-Channel MOSFET manufactured by IPS.
Features : - Ro HS pliant - Low ON Resistance - Low Gate Charge - Peak Current vs Pulse Width Curve - Inductive Switching Curves Ordering Information PART NUMBER PACKAGE FTD06N03NA TO-252 BRAND VDSS 30V Lead Free Package and Finish RDS(ON)(Typ.) 3.6mΩ ID( Silicon limited current) 90A ID( Package limited) 60A Absolute Maximum Ratings Tj=25℃ unless otherwise specified Symbol Parameter Rating VDSS ID IDM PD VGS Drain-to-Source Voltage Continuous Drain Current TC =25℃ Continuous Drain Current TC =100℃ Pulsed Drain Current TC =25℃(NOTE - 1) Power Dissipation TC =25℃ Derating Factor above 25℃ Gate-to-Source Voltage 30 90 60 360 53 0.424 ±20 EAS Single Pulse Avalanche Energy(NOTE - 2) TL Maximum Temperature for Soldering Operating Junction and Storage TJ and TSTG Temperature Range 150,-55 to150 Units V A A A W W/℃ V m J ℃ Thermal Resistance Symbo...