FTD06N03NA
FTD06N03NA is N-Channel MOSFET manufactured by IPS.
Features
:
- Ro HS pliant
- Low ON Resistance
- Low Gate Charge
- Peak Current vs Pulse Width Curve
- Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE FTD06N03NA TO-252
BRAND
VDSS 30V
Lead Free Package and Finish
RDS(ON)(Typ.) 3.6mΩ
ID( Silicon limited current)
90A
ID( Package limited)
60A
Absolute Maximum Ratings
Tj=25℃ unless otherwise specified
Symbol
Parameter
Rating
VDSS ID
IDM PD VGS
Drain-to-Source Voltage Continuous Drain Current TC =25℃ Continuous Drain Current TC =100℃ Pulsed Drain Current TC =25℃(NOTE
- 1) Power Dissipation TC =25℃ Derating Factor above 25℃
Gate-to-Source Voltage
30 90 60 360 53 0.424 ±20
EAS Single Pulse Avalanche Energy(NOTE
- 2)
TL Maximum Temperature for Soldering
Operating Junction and Storage TJ and TSTG Temperature Range
150,-55 to150
Units V A A A W
W/℃ V m J
℃
Thermal Resistance
Symbo...