FTD05N03NA
FTD05N03NA is N-Channel MOSFET manufactured by IPS.
Features
:
- Ro HS pliant
- Low ON Resistance
- Low Gate Charge
- Peak Current vs Pulse Width Curve
- Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE FTD05N03NA TO-252
BRAND
VDSS 30V
Lead Free Package and Finish
RDS(ON)(Typ.) 4mΩ
ID 100A
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-to-Source Voltage
ID Continuous Drain Current Continuous Drain Current TC =100℃
IDM Pulsed Drain Current (NOTE
- 1)
100 75 400
Power Dissipation PD Derating Factor above 25℃
90 0.71
VGS Gate-to-Source Voltage
±20
EAS Single Pulse Avalanche Energy(NOTE
- 2)
TL Maximum Temperature for Soldering
Operating Junction and Storage TJ and TSTG Temperature Range
150,-55 to150
Units V A A A W
W/℃ V m J
℃
Thermal...