• Part: FTD05N03NA
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: IPS
  • Size: 1.17 MB
Download FTD05N03NA Datasheet PDF
IPS
FTD05N03NA
FTD05N03NA is N-Channel MOSFET manufactured by IPS.
Features : - Ro HS pliant - Low ON Resistance - Low Gate Charge - Peak Current vs Pulse Width Curve - Inductive Switching Curves Ordering Information PART NUMBER PACKAGE FTD05N03NA TO-252 BRAND VDSS 30V Lead Free Package and Finish RDS(ON)(Typ.) 4mΩ ID 100A Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter VDSS Drain-to-Source Voltage ID Continuous Drain Current Continuous Drain Current TC =100℃ IDM Pulsed Drain Current (NOTE - 1) 100 75 400 Power Dissipation PD Derating Factor above 25℃ 90 0.71 VGS Gate-to-Source Voltage ±20 EAS Single Pulse Avalanche Energy(NOTE - 2) TL Maximum Temperature for Soldering Operating Junction and Storage TJ and TSTG Temperature Range 150,-55 to150 Units V A A A W W/℃ V m J ℃ Thermal...