• Part: FTD36N06N
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: IPS
  • Size: 370.77 KB
Download FTD36N06N Datasheet PDF
IPS
FTD36N06N
FTD36N06N is N-Channel MOSFET manufactured by IPS.
Features : - Ro HS pliant - Low ON Resistance - Low Gate Charge - Peak Current vs Pulse Width Curve Ordering Information PART NUMBER FTD36N06N PACKAGE TO-252 BRAND Pb Lead Free Package and Finish VDSS 60V RDS(ON) (Typ.) 28 m: ID 25A TO-252 Not to Scale Absolute Maximum Ratings TC=25 o C unless otherwise specified Symbol Parameter VDSS ID ID@ 100 o C IDM Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current, VGS@ 10V Power Dissipation Derating Factor above 25 o C (NOTE - 1) (NOTE - 2) VGS dv/dt Gate-to-Source Voltage Peak Diode Recovery dv/dt (NOTE - 3) TL TPKG TJ and TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds Package Body for 10 seconds Operating Junction and Storage Temperature Range Maximum 60 25 Fig-3 80 50 0.33 ± 20 5.0 300 260 -55 to...