FTD36N06N
FTD36N06N is N-Channel MOSFET manufactured by IPS.
Features
:
- Ro HS pliant
- Low ON Resistance
- Low Gate Charge
- Peak Current vs Pulse Width Curve
Ordering Information
PART NUMBER FTD36N06N
PACKAGE TO-252
BRAND
Pb Lead Free Package and Finish
VDSS 60V
RDS(ON) (Typ.) 28 m:
ID 25A
TO-252 Not to Scale
Absolute Maximum Ratings TC=25 o C unless otherwise specified
Symbol
Parameter
VDSS ID ID@ 100 o C IDM
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current, VGS@ 10V Power Dissipation Derating Factor above 25 o C
(NOTE
- 1) (NOTE
- 2)
VGS dv/dt
Gate-to-Source Voltage Peak Diode Recovery dv/dt
(NOTE
- 3)
TL TPKG
TJ and TSTG
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds Package Body for 10 seconds
Operating Junction and Storage Temperature Range
Maximum 60 25
Fig-3 80 50 0.33 ± 20 5.0
300 260
-55 to...