DESCRIPTION
These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. PD- 95133 Si4435DYPbF HEXFET® Power MOSFET A 1 8 D 2 7 D VDSS = -30V 3 6 D 4 5 D RDS(on) = 0.020Ω Top View SO-8 ABSOLUTE MAXIMUM RATINGS
VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient Max. -30 -8.0 -6.4 -50 2.5 1.6 0.02 ± 20 -55 to + 150 Max. 50 Units V A W W/°C V °C Units °C/W 1 09/30/04 Si4435DYPbF ELECTRICAL CHARACTERISTICS
@ TJ = 25°C (unless otherwise specified) Parameter Min.
International Rectifier
