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DE275-101N30A - RF Power MOSFET

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IXYS Corporation

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DE275-101N30A RF Power MOSFET by IXYS Corporation - Datasheet Preview — Datasheet preview – DE275-101N30A

Datasheet Details

Part number	DE275-101N30A
Manufacturer	IXYS Corporation
File Size	173.52 KB
Description	RF Power MOSFET
Datasheet	DE275-101N30A Datasheet
Additional preview pages of the DE275-101N30A datasheet.

Product details

Features

min. VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ VGS = 0 V, ID = 3 ma VDS = VGS, ID = 250 µa VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% VDS = 15 V, ID = 0.5ID25, pulse test typ. max. 100 V V nA µA µA Ω S +175 °C °C +175 °C °C g.
Isolated Substrate.
high isolation voltage (>2500V).
excellent thermal transfer.
Increased temperature and power.

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Published: Apr 28, 2011 |