Overview: DE275-101N30A
RF Power MOSFET
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 VDSS ID25
Maximum Ratings 100 100 ±20 ±30 30.0 240 TBD TBD 5.5 >200 550 V V V V A A A mJ V/ns V/ns W W W C/W C/W
SG1 SG2 GATE = = ≤ = 100 V 30.0 A 0.06 Ω 550 W RDS(on) PDC PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions
Tc = 25°C Derate 4.4W/°C above 25°C Tc = 25°C DRAIN 270 3.5 0.25 0.
