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DE275-101N30A
RF Power MOSFET
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0
VDSS ID25
Maximum Ratings 100 100 ±20 ±30 30.0 240 TBD TBD 5.5 >200 550 V V V V A A A mJ V/ns V/ns W W W C/W C/W
SG1 SG2 GATE
= = ≤ =
100 V 30.0 A 0.06 Ω 550 W
RDS(on) PDC
PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions
Tc = 25°C Derate 4.4W/°C above 25°C Tc = 25°C
DRAIN
270 3.5 0.25 0.53 Characteristic Values
TJ = 25°C unless otherwise specified
SD1
SD2
Features
min.
DE275-101N30A Datasheet
