DE275-201N25A - RF Power MOSFET

Features

Isolated Substrate.
high isolation voltage (>2500V).
excellent thermal transfer.
Increased temperature and power.
cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (.

IXYS Corporation

Datasheet Details

Part number	DE275-201N25A
Manufacturer	IXYS Corporation
File Size	166.81 KB
Description	RF Power MOSFET
Datasheet	DE275-201N25A Datasheet
Additional preview pages of the DE275-201N25A datasheet.

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Full PDF Text Transcription

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DE275-201N25A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 VDSS ID25 RDS(on) Maximum Ratings 200 200 ±20 ±30 25 150 25 20 5 >200 590 V V V V A A A mJ V/ns GATE = = = = 200 V 25 A 0.13 Ω 590 W PDC DRAIN V/ns W W W C/W C/W SG1 SG2 SD1 SD2 PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions Tc = 25°C Derate 1.9W/°C above 25°C Tc = 25°C 284 3.0 0.25 0.53 Characteristic Values min. 200 2.5 3.0 5.5 ±100 50 1 .

Published: Apr 28, 2011 |