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DE275-102N06A
RF Power MOSFET
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions
Tc = 25°C Derate 2.0W/°C above 25°C Tc = 25°C
VDSS ID25 RDS(on)
Maximum Ratings 1000 1000 ±20 ±30 8 48 6 20 5 >200 590 300 3.0 0.25 0.50 V V V V A A A mJ V/ns V/ns W W W C/W C/W
SG1 SG2 GATE
= = = =
1000 V 8A 1.5 Ω 590 W
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.
DE275-102N06A Datasheet
