DE275-501N16A Description
Directed Energy, Inc. An DE275-501N16A RF Power MOSFET Preliminary Data Sheet IXYS pany N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDHS PDAMB RthJHS TJ TJM Tstg TL.
DE275-501N16A Key Features
- Isolated Substrate
- high isolation voltage (>2500V)
- excellent thermal transfer
- Increased temperature and power
- cycling capability IXYS advanced low Qg process easier to drive faster switching Low RDS(on) Very low insertion inductan
- Optimized for RF and high speed
- Easy to mount-no insulators needed
- High power density