Datasheet4U.com

DE275-501N16A - RF Power MOSFET

Product Overview

IXYS Corporation

📥 Download Datasheet

DE275-501N16A RF Power MOSFET by IXYS Corporation - Datasheet Preview — Datasheet preview – DE275-501N16A

Datasheet Details

Part number	DE275-501N16A
Manufacturer	IXYS Corporation
File Size	102.01 KB
Description	RF Power MOSFET
Datasheet	DE275-501N16A Datasheet
Additional preview pages of the DE275-501N16A datasheet.

Product details

Features

SG1 SG2 GATE = = = = 500 V 16 A .5 Ω 375 W Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 Tc = 25°C Derate 3.0W/°C above 25°C Tc = 25°C DRAIN SD1 SD2.
Isolated Substrate.
high isolation voltage (>2500V).
excellent thermal transfer.
Increased temperature and power.

📁 Similar Datasheet

DE21Xxxxxxxxx - High Voltage Ceramic Capacitors (muRata)
DE2812C - Fixed Inductors (TOKO)
DE28F800B3 - FAST BOOT BLOCK FLASH MEMORY (Intel)
DE28F800F3 - 3V Fast Book Block Flash Memory (Intel)
DE2B3xxxxxxxx - High Voltage Ceramic Capacitors (muRata)
DE2E3KY102MA2BM01 - High Voltage Ceramic Capacitors (muRata)
DE2E3KY472MA3BM02 - Capacitors (muRata)
DE2E3KY472MA3BM02F - Capacitors (muRata)

Other Datasheets by IXYS Corporation

DE275-101N30A - RF Power MOSFET
DE275-102N06A - RF Power MOSFET
DE275-201N25A - RF Power MOSFET
DE275X2-102N06A - RF Power MOSFET
DE275X2-501N16A - RF Power MOSFET

Published: Apr 28, 2011 |