DE275X2-102N06A - RF Power MOSFET

Features

PDAMB.
Isolated Substrate.
high isolation voltage (>2500V).
excellent thermal transfer.
Increased temperature and power.
cycling capability IXYS advanced low Qg process easier to drive faster switching Low RDS(on) Very low insertion inductance (.

IXYS Corporation

Datasheet Details

Part number	DE275X2-102N06A
Manufacturer	IXYS Corporation
File Size	105.55 KB
Description	RF Power MOSFET
Datasheet	DE275X2-102N06A Datasheet
Additional preview pages of the DE275X2-102N06A datasheet.

📁 Similar Datasheet

DE21Xxxxxxxxx - High Voltage Ceramic Capacitors (muRata)
DE2812C - Fixed Inductors (TOKO)
DE28F800B3 - FAST BOOT BLOCK FLASH MEMORY (Intel)
DE28F800F3 - 3V Fast Book Block Flash Memory (Intel)
DE2B3xxxxxxxx - High Voltage Ceramic Capacitors (muRata)
DE2E3KY102MA2BM01 - High Voltage Ceramic Capacitors (muRata)
DE2E3KY472MA3BM02 - Capacitors (muRata)
DE2E3KY472MA3BM02F - Capacitors (muRata)
DE2E3xxxxxxxx - High Voltage Ceramic Capacitors (muRata)
DE2F3xxxxxxxx - High Voltage Ceramic Capacitors (muRata)

Other Datasheets by IXYS Corporation

DE275X2-501N16A - RF Power MOSFET
DE275-101N30A - RF Power MOSFET
DE275-102N06A - RF Power MOSFET
DE275-201N25A - RF Power MOSFET
DE275-501N16A - RF Power MOSFET

Full PDF Text Transcription

Click to expand full text

Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE275X2-102N06A RF Power MOSFET Preliminary Data Sheet IXYS Company Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching VDSS ID25 RDS(on) PDHS = = = = 1000 V 6A 2.0 Ω 750 W The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.

Published: Apr 28, 2011 |