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IXFC20N80P - PolarHV HiPerFET Power MOSFET

Download the IXFC20N80P datasheet PDF. This datasheet also covers the IXFR20N80P variant, as both devices belong to the same polarhv hiperfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFR20N80P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXFC20N80P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFC20N80P. For precise diagrams, and layout, please refer to the original PDF.

PolarHVTM HiPerFET Power MOSFET IXFC 20N80P IXFR 20N80P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol VDSS VDGR...

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Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL www.DataSheet4U.net VDSS = 800 V ID25 = 10 A RDS(on) ≤ 500 mΩ ≤ 250 ns trr Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 3 Ω TC = 25°C Maximum Ratings 800 800 ±30 ±40 11 60 10 30 1.0 10 166 -55 ... +150 150 -55 ...

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