IXFC60N20 Description
+150 V V V V A A A mJ J V/ns W °C °C °C °C g ISOPLUS 220TM G D S G = Gate, S = Source Patent pending Isolated back surface D = Drain, 1.6 mm (0.062 in.) from case for 10 s 300.
IXFC60N20 Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation l Low drain to tab capacitance(<35pF) l Low RDS (on) l Rugged polysilicon gate cell structure