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ADVANCE TECHNICAL INFORMATION
HiPerFETTM MOSFET
ISOPLUS220TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXFC 60N20
VDSS ID25 RDS(on) trr
= 200 = 60 = 33 ≤ 250
V A mΩ ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 200 200 ± 20 ± 30 60 240 60 30 1.0 5 230 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C g
ISOPLUS 220TM
G D S G = Gate, S = Source * Patent pending Isolated back surface* D = Drain,
1.6 mm (0.
IXFC60N20 Datasheet
