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ADVANCE TECHNICAL INFORMATION
HiPerFETTM MOSFET
ISOPLUS220TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXFC 80N10
VDSS ID25 RDS(on) trr
= 100 V = 80 A = 12.5 mΩ ≤ 200 ns
Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC VISOL Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C Lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 100 100 ± 20 ± 30 80 55 320 80 50 2.5 5 230 -55 ... +150 150 -55 ...
IXFC80N10 Datasheet
