Overview: PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN38N100P VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 38A 210mΩ 300ns miniBLOC, SOT-227 B E153432
S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1000 1000 ± 30 ± 40 38 120 19 2 20 1000 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g
z G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal.
