IXFN38N100Q2 Description
+150 V V V V A A A mJ J V/ns W °C °C °C.
IXFN38N100Q2 Key Features
- Double metal process for low gate resistance -miniBLOC, with Aluminium nitride isolation -Unclamped Inductive Switching
- Fast intrinsic Rectifier
- Part: IXFN38N100Q2
- Manufacturer: IXYS
- Size: 585.95 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXFN38N100P | Polar Power MOSFET HiPerFET |
| IXFN38N80Q2 | Power MOSFET |
| IXFN300N10P | Power MOSFET |
| IXFN30N110P | Polar Power MOSFET HiPerFET |
| IXFN30N120P | Polar Power MOSFET HiPerFET |