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HiPerFETTM Power MOSFETs Q2-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md FC 1.6mm (0.062 in.) from case for 10s Plastic body for 10s 50/60 Hz, RMS IISOL ≤ 1mA Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
IXFK38N80Q2 IXFN38N80Q2 IXFX38N80Q2
VDSS ID25 trr
RDS(on)
= 800V = 38A ≤ 220mΩ ≤ 250ns
TO-264 (IXFK) Maximum Ratings 800 800 ± 30 ± 40 38 150 38 4 20 735 -55 ... +150 150 -55 ... +150 300 260 2500 3000 1.5/13 1.3/11.5 20..120 /4.5..27 10 6 30 V V V V A A A J V/ns W °C °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in.
IXFN38N80Q2 Datasheet
