Overview: HiPerFETTM Power MOSFETs Q2-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md FC 1.6mm (0.062 in.) from case for 10s Plastic body for 10s 50/60 Hz, RMS IISOL ≤ 1mA Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C IXFK38N80Q2 IXFN38N80Q2 IXFX38N80Q2 VDSS ID25 trr RDS(on) = 800V = 38A ≤ 220mΩ ≤ 250ns TO-264 (IXFK) Maximum Ratings 800 800 ± 30 ± 40 38 150 38 4 20 735 -55 ... +150 150 -55 ... +150 300 260 2500 3000 1.5/13 1.3/11.5 20..120 /4.5..27 10 6 30 V V V V A A A J V/ns W °C °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. N/lb. g g g
S D Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. G = Gate S = Source D = Drain TAB = Drain (TAB)
G D S (TAB) PLUS247 (IXFX) miniBLOC, SOT-227 B (IXFN) E153432
S G t = 1min t = 1s Mounting torque (TO-264) Terminal connection torque (SOT-227B)
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