IXFP4N100P
IXFP4N100P is Power MOSFET manufactured by IXYS.
Polar TM Hi Per FETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFA4N100P IXFP4N100P
VDSS ID25
RDS(on)
= 1000V = 4A ≤ 3.3Ω
TO-263 AA (IXFA)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold FC Md Weight
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 1000 1000 ±20 ±30 4 8 4 200 10 150 -55 ... +150 150 -55 ... +150 V V V V A A A m J V/ns W °C °C °C °C °C Nm/lb.in. Nm/lb.in. g g Features z z z z z
G S D (Tab)
TO-220AB (IXFP)
D (Tab)
G = Gate S = Source
D = Drain Tab = Drain
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 Seconds Mounting Force (TO-263) Mounting Torque (TO-220) TO-263 TO-220
300 260 10.65 / 2.2..14.6 1.13 / 10 2.5 3.0
International Standard Packages Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier
Advantages z
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 125°C VGS = 10V, ID = 0.5
- ID25, Notes 1
Characteristic Values Min. Typ. Max. 1000 3.0 6.0 ±100 10 V V n A μA Ω z z
High Power Density Easy to Mount Space Savings
Applications z
750 μA 3.3 z z z z
Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls
© 2010 IXYS CORPORATION, All Rights Reserved
DS99921A(7/10)
IXFA4N100P...
