IXFP4N100QM
IXFP4N100QM is Power MOSFET manufactured by IXYS.
Advance Technical Information
Hi Per FETTM Power MOSFET Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting Torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C
VDSS = 1000V ID25 = 2.2A RDS(on) ≤ 3.0Ω
Maximum Ratings 1000 1000 ±20 ±30 2.2 16 4 700 5 46
- 55 ... +150 150
- 55 ... +150 300 260 1.13 / 10 2.5 V V V V A A A m J V/ns W °C °C °C °C °C Nm/lb.in. g
OVERMOLDED (IXFP...M) OUTLINE
TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
DS D = Drain
G = Gate S = Source
Features
Plastic Overmolded Tab for Electrical Isolation International Standard Package Avalanche Rated Fast Intrinsic Diode Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages
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Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1m A VDS = VGS, ID = 1.5m A VGS = ±20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 2A, Note 1 TJ = 125°C
Characteristic Values Min. Typ. Max. 1000 3.0 5.0 V V
High Power Density Easy to Mount Space Savings
±100 n A 25 μA 1 m A 3.0 Ω
© 2009 IXYS CORPORATION, All Rights Reserved
DS100165(06/09)
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC VGS= 10V, VDS = 0.5 VDSS, ID = 2A Resistive Switching Times VGS = 10V, VDS = 0.5 VDSS, ID = 2A, RG = 4.7Ω (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 2A, Note 1 Characteristic Values Min. Typ. Max. 2.5 4.3 1185 130 65 17 15 32 18 43.5 6.2 23.0 S p F p F p F ns ns ns ns n C n C n C 2.7 °C/W
Terminals: 1
- Gate 2
- Drain (Collector) 3
- Source (Emitter) 1 2 3
OVERMOLDED TO-220 (IXFP...M)
Source-Drain Diode Symbol Test Conditions (TJ = 25°C,...
