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IXFP4N100PM Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: Advance Technical Information PolarTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFP4N100PM VDSS ID25 RDS(on) = 1000V = 2.5A ≤ 3.3Ω OVERMOLDED Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight ..net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°C TC = 25°C Maximum Ratings 1000 1000 ± 20 ± 30 2.5 8.0 4.0 200 10 57 - 55 ... +150 150 - 55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in.

Key Features

  • z z z z 1.6 mm (0.062 in. ) from Case for 10 s Plastic Body for 10 s Mounting Torque 300 260 1.13/10 2.5 Plastic Overmolded Tab for Electrical Isolation Avalanche Rated Fast Intrinsic Diode Low Package Inductance Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ±20V, VDS = 0V VDS = VDSS, VGS = 0V VGS = 10V, ID = 2A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 1000 3.0 6.0 V V High Powe.

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IXFP4N100PM Distributor