IXFP4N100Q Datasheet | IXYS

.. TM Hi Per FET Power MOSFETs Q-Class IXFA 4N100Q IXFP 4N100Q VDSS =1000 V = 4 A ID25 RDS(on) = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque (TO-220) TO-220 TO-263 IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 4 16 4 20 700 5 150 -55 to +150 150 -55 to +150 300 1.13/10 4 2 V V V V A A A m J m J V/ns W °C °C °C °C Nm/lb.in. TO-220 (IXFP) D (TAB) G DS TO-263 (IXFA) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain Features g g - IXYS advanced low Qg process - Low gate charge and capacitances - easier to drive - faster switching - International standard packages - Low RDS (on) - Rated for unclamped Inductive load Switching (UIS) - Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 3.0 5.0 ±100 TJ = 25°C TJ = 125°C 50 1 3.0 V V n A m A m A W VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 m A VDS = VGS, ID = 1.5 m A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V Advantages - Easy to mount - Space...