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IXFP5N100P - Power MOSFET

Features

  • z z z z z z z International standard packages Dynamic dv/dt Rating Avalanche Rated Low RDS(ON), rugged PolarTM process Low QG Low Drain-to-Tab capacitance Low package inductance Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ±30V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 1000 3.0 6.0 V V Advantages z z Easy to mount Space savings.

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Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA5N100P IXFH5N100P IXFP5N100P RDS(on) VDSS ID25 = 1000V = 5A ≤ 2.8Ω TO-263 (IXFA) G Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1000 1000 ±30 ±40 5 10 5 300 10 250 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. g g g G = Gate S = Source G G D S S (TAB) TO-247 (IXFH) (TAB) TO-220 (IXFP) DS (TAB) 1.6mm (0.
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