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Preliminary Technical Information
PolarHVTMHiPerFET Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFP 8N50PM
VDSS ID25 trr
RDS(on)
= 500 V = 4.4 A ≤ 0.8 Ω ≤ 200 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md
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Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 18 Ω TC = 25° C
Maximum Ratings 500 500 ±30 ±40 4.4 14 8 20 300 10 42 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W °C °C °C °C °C
OVERMOLDED TO-220 (IXTP...M) OUTLINE
G
Isolated Tab D S
G = Gate S = Source
D = Drain
1.
IXFP8N50PM Datasheet
