Datasheet4U Logo Datasheet4U.com

IXFP8N50PM - Power MOSFET

Key Features

  • l 1.13/10 Nm/lb. in. 4 g l l Weight l Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 1 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C Characteristic Values Min. Typ. Max. 500 3.0 5.5 ±100 5 500 0.8 V V nA µA µA Ω l Plastic overmolded tab for electrical isolation International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXFP8N65X2 Power MOSFET IXYS
IXFP8N65X2 N-Channel MOSFET INCHANGE
IXFP8N85X Power MOSFET IXYS
IXFP8N85X N-Channel MOSFET INCHANGE
IXFP8N85XM Power MOSFET IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFP05N100M High Voltage HiperFET
IXFP102N15T Power MOSFET
IXFP10N60P Polar MOSFET
IXFP10N80P Power MOSFET
IXFP110N15T2 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Technical Information PolarHVTMHiPerFET Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFP 8N50PM VDSS ID25 trr RDS(on) = 500 V = 4.4 A ≤ 0.8 Ω ≤ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md www.DataSheet4U.net Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 18 Ω TC = 25° C Maximum Ratings 500 500 ±30 ±40 4.4 14 8 20 300 10 42 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W °C °C °C °C °C OVERMOLDED TO-220 (IXTP...M) OUTLINE G Isolated Tab D S G = Gate S = Source D = Drain 1.